dimensions inches millimeters a 0.55 min. 14.0 min. b 0.12 max. 3.0 max. c 0.16 4.0 d 0.14 3.55 e 0.098 max. 2.5 max. f 0.0 1 6 0. 4 g 0.05 0.012 1.27 h 0.018 0.45 description: the BS08d bilateral switch is a silicon planar monolithic integrated circuit with the electrical character- istics of a bilateral thyristor. the device is designed to switch at 7 to 9 volts with a 0.01%/? temper- ature coefficient and have excel- lently matched characteristics in both directions. features: low switching voltage of 7 to 9 volts excellent switching voltage temperature characteristics (0.01%/?) high reliability devices gate electrode facilitating switching operation control and synchronization. applications: trigger circuits for thyristor or triac, oscillators, timers ordering information: example: select the complete five digit part number you desire from the table - i.e. BS08d is a 175ma silicon bilateral switch. type BS08d powerex, inc., 200 hillis street, youngwood, pennsylvania 15697-1800 (724) 925-7272 silicon bilateral switch BS08d outline drawing tt-1 ? gg d d c b j h a ? t2 terminal ? gate ? t1 terminal e f ?? outline drawing connection diagram
absolute maximum ratings, t a = 25 ? unless otherwise specified ratings symbol BS08d units dc forward anode current i t 175 ma repetitive peak forward current 1.0 amperes (1% duty cycle, 10 s pulsewidth), t a = 100 c non-repetitive peak forward current (10 s pulsewidth) 2.0 amperes power dissipation p t 450 mw dc gate current i g 5ma storage temperature t stg -55 to 125 c operating temperature t j -55 to 125 c electrical and thermal characteristics, t j = 25 ? unless otherwise specified BS08 d characteristics symbol test conditions min. typ. max. units switching voltage v s t a = 25 c 7 8 9 volts switching current i s t a = 25 c 200 a absolute switching voltage difference v s1 -v s2 t a = 25 c 0.5 volts absolute switching current difference i s1 -i s2 t a = 25 c 100 a holding current i h t a = 25 c 1.5 ma off-state current i d v d = 5v, t a = 25 c 1.0 a v d = 5v, t a = 85 c 10 a temperature coefficient of switching voltage t a = -55 to 85 c 0.01 %/ c peak on-state voltage v t i t = 175ma, t a = 25 c 1.4 volts gate trigger current i gt v d = 5v, t a = 25 c10 200 a gate non-trigger voltage v gd v d = 5v, t a = 85 c 0.2 volts powerex, inc., 200 hillis street, youngwood, pennsylvania 15697-1800 (724) 925-7272 BS08d silicon bilateral switch tt-2
powerex, inc., 200 hillis street, youngwood, pennsylvania 15697-1800 (724) 925-7272 BS08d silicon bilateral switch off-state current vs. junction temperature (typical) junction temperature, t j , ( c) -40 10 -2 10 -1 10 0 10 1 0 40 80 120 -20 -60 20 60 100 140 off-state current, i d , ( a) v d = 5v switching voltage vs.junction temperature (typical) junction temperature, t j , ( c) -60 7.5 7.7 7.9 8.1 8.3 switching voltage, v s , (volts) -20 20 60 100 140 -40 0 40 80 120 switching current vs. junction temperature (typical) junction temperature, t j , ( c) switching current, i s , ( a) -60 -20 20 60 100 140 -40 0 40 80 120 0 80 160 240 320 typical value typical distribution on-state voltage vs. junction temperature (typical) junction temperature, t j , ( c) -60 0.80 0.90 1.00 1.10 1.20 1.30 on-state voltage, v t , (volts) i t = 175ma -20 20 60 100 140 -40 0 40 80 120 holding current vs. junction temperature (typical) junction temperature, t j , ( c) holding current, i h , ( a) -60 -40 0 40 80 -20 20 60 100 0 200 400 600 800 typical value typical distribution gate trigger current vs. junction temperature (typical) junction temperature, t j , ( c) gate trigger current, i gt , ( a) 0 20 40 60 80 100 0 40 80 120 160 typical value typical distribution v d = 5v gate trigger voltage vs. junction temperature (typical) junction temperature, t j , ( c) gate trigger voltage, v gt , (volts) 0 20 40 60 80 100 0 0.2 0.4 0.6 0.8 typical distribution v d = 5v tt-3
powerex, inc., 200 hillis street, youngwood, pennsylvania 15697-1800 (724) 925-7272 BS08d silicon bilateral switch circuit symbol 5v 10k 47 a a v v gate characteristics measurement circuit application examples thyristor trigger circuit equivalent circuit t 2 t 1 g load sbs BS08d bcr16 hm-8 triac vr 200k ac input 100vac r 1 100 , 0.25w r 2 100 0.5w r 3 15k (1w) d 1 d 2 c 2 0.1 f 400wv c 1 0.47 f 25wv this circuit is useable in such applications as lighting control circuits, electric heater control, and other load control applications. triac trigger circuit v t2 v t1 v s2 v s1 i s2 i d2 i d1 i h2 i s1 i h1 -i +i -v +v static characteristics load 1k sbs BS08d 0.1 f c 1m vr dr 220k cr2am-8 cr ac input 100vac r 2 this circuit is widely used in dc motor contol and other control applications. t 1 t 2 g tt-4
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